000188604 001__ 188604
000188604 005__ 20210129215223.0
000188604 037__ $$aFZJ-2015-01946
000188604 041__ $$aEnglish
000188604 1001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b0$$eCorresponding Author$$ufzj
000188604 1112_ $$aColloquium at IBM Research Laboratory, Rüschlikon$$cRüschlikon$$d2015-01-19$$wSwitzerland
000188604 245__ $$aBallistic and phase-coherent transport in In As-based nanowires
000188604 260__ $$c2015
000188604 3367_ $$0PUB:(DE-HGF)31$$2PUB:(DE-HGF)$$aTalk (non-conference)$$btalk$$mtalk$$s1427383123_14663$$xInvited
000188604 3367_ $$033$$2EndNote$$aConference Paper
000188604 3367_ $$2DataCite$$aOther
000188604 3367_ $$2DINI$$aOther
000188604 3367_ $$2BibTeX$$aINPROCEEDINGS
000188604 3367_ $$2ORCID$$aLECTURE_SPEECH
000188604 520__ $$aSemiconductor nanowires, fabricated by a bottom-up approach, are very promising as buildingblocks for future nanoscaled electronic devices. In addition, they are also very interesting objectsfor studying fundamental quantum phenomena. On InAs nanowires controlled by a set of top-gateelectrodes ballistic transport was investigated. By varying the gate voltage distinct conductancesteps due to quantized conductance were observed. By means of bias-dependent measurementsat various magnetic fields the g-factor was extracted. In a set-up with two constrictions in seriesit could be shown that the total conductance is solely determined by the element with the lowerresistance. We furthermore investigated GaAs/InAs core/shell nanowires, where the highlyconductive InAs shell is wrapped around an insulating GaAs core nanowire. These nanowireswere grown by molecular beam epitaxy. At low temperatures pronounced flux periodic (h/e)magnetoconductance oscillations are observed, when the magnetic field is oriented along thenanowires axis. These very regular oscillations are explained by the formation of closed-loopquantum states in the tube-like InAs shell comprising a flux periodic energy spectrum. Themagnetoconductance oscillations are even observed at temperatures as high as 50K.
000188604 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000188604 773__ $$y2015
000188604 909CO $$ooai:juser.fz-juelich.de:188604$$pVDB
000188604 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000188604 9130_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen für zukünftige Informationstechnologien$$vSpin-based and quantum information$$x0
000188604 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000188604 9141_ $$y2015
000188604 920__ $$lyes
000188604 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000188604 980__ $$atalk
000188604 980__ $$aVDB
000188604 980__ $$aI:(DE-Juel1)PGI-9-20110106
000188604 980__ $$aUNRESTRICTED