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| Home > Publications database > Ballistic and phase-coherent transport in In As-based nanowires |
| Talk (non-conference) (Invited) | FZJ-2015-01946 |
2015
Abstract: Semiconductor nanowires, fabricated by a bottom-up approach, are very promising as buildingblocks for future nanoscaled electronic devices. In addition, they are also very interesting objectsfor studying fundamental quantum phenomena. On InAs nanowires controlled by a set of top-gateelectrodes ballistic transport was investigated. By varying the gate voltage distinct conductancesteps due to quantized conductance were observed. By means of bias-dependent measurementsat various magnetic fields the g-factor was extracted. In a set-up with two constrictions in seriesit could be shown that the total conductance is solely determined by the element with the lowerresistance. We furthermore investigated GaAs/InAs core/shell nanowires, where the highlyconductive InAs shell is wrapped around an insulating GaAs core nanowire. These nanowireswere grown by molecular beam epitaxy. At low temperatures pronounced flux periodic (h/e)magnetoconductance oscillations are observed, when the magnetic field is oriented along thenanowires axis. These very regular oscillations are explained by the formation of closed-loopquantum states in the tube-like InAs shell comprising a flux periodic energy spectrum. Themagnetoconductance oscillations are even observed at temperatures as high as 50K.
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