TY  - CONF
AU  - Schäpers, Thomas
TI  - Ballistic and phase-coherent transport in In As-based nanowires
M1  - FZJ-2015-01946
PY  - 2015
AB  - Semiconductor nanowires, fabricated by a bottom-up approach, are very promising as buildingblocks for future nanoscaled electronic devices. In addition, they are also very interesting objectsfor studying fundamental quantum phenomena. On InAs nanowires controlled by a set of top-gateelectrodes ballistic transport was investigated. By varying the gate voltage distinct conductancesteps due to quantized conductance were observed. By means of bias-dependent measurementsat various magnetic fields the g-factor was extracted. In a set-up with two constrictions in seriesit could be shown that the total conductance is solely determined by the element with the lowerresistance. We furthermore investigated GaAs/InAs core/shell nanowires, where the highlyconductive InAs shell is wrapped around an insulating GaAs core nanowire. These nanowireswere grown by molecular beam epitaxy. At low temperatures pronounced flux periodic (h/e)magnetoconductance oscillations are observed, when the magnetic field is oriented along thenanowires axis. These very regular oscillations are explained by the formation of closed-loopquantum states in the tube-like InAs shell comprising a flux periodic energy spectrum. Themagnetoconductance oscillations are even observed at temperatures as high as 50K.
T2  - Colloquium at IBM Research Laboratory, Rüschlikon
CY  - 19 Jan 2015, Rüschlikon (Switzerland)
Y2  - 19 Jan 2015
M2  - Rüschlikon, Switzerland
LB  - PUB:(DE-HGF)31
UR  - https://juser.fz-juelich.de/record/188604
ER  -