Home > Publications database > Ballistic and phase-coherent transport in In As-based nanowires > print |
001 | 188604 | ||
005 | 20210129215223.0 | ||
037 | _ | _ | |a FZJ-2015-01946 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 0 |e Corresponding Author |u fzj |
111 | 2 | _ | |a Colloquium at IBM Research Laboratory, Rüschlikon |c Rüschlikon |d 2015-01-19 |w Switzerland |
245 | _ | _ | |a Ballistic and phase-coherent transport in In As-based nanowires |
260 | _ | _ | |c 2015 |
336 | 7 | _ | |a Talk (non-conference) |b talk |m talk |0 PUB:(DE-HGF)31 |s 1427383123_14663 |2 PUB:(DE-HGF) |x Invited |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a Other |2 DataCite |
336 | 7 | _ | |a Other |2 DINI |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
520 | _ | _ | |a Semiconductor nanowires, fabricated by a bottom-up approach, are very promising as buildingblocks for future nanoscaled electronic devices. In addition, they are also very interesting objectsfor studying fundamental quantum phenomena. On InAs nanowires controlled by a set of top-gateelectrodes ballistic transport was investigated. By varying the gate voltage distinct conductancesteps due to quantized conductance were observed. By means of bias-dependent measurementsat various magnetic fields the g-factor was extracted. In a set-up with two constrictions in seriesit could be shown that the total conductance is solely determined by the element with the lowerresistance. We furthermore investigated GaAs/InAs core/shell nanowires, where the highlyconductive InAs shell is wrapped around an insulating GaAs core nanowire. These nanowireswere grown by molecular beam epitaxy. At low temperatures pronounced flux periodic (h/e)magnetoconductance oscillations are observed, when the magnetic field is oriented along thenanowires axis. These very regular oscillations are explained by the formation of closed-loopquantum states in the tube-like InAs shell comprising a flux periodic energy spectrum. Themagnetoconductance oscillations are even observed at temperatures as high as 50K. |
536 | _ | _ | |a 522 - Controlling Spin-Based Phenomena (POF3-522) |0 G:(DE-HGF)POF3-522 |c POF3-522 |x 0 |f POF III |
773 | _ | _ | |y 2015 |
909 | C | O | |o oai:juser.fz-juelich.de:188604 |p VDB |
910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)128634 |
913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-422 |2 G:(DE-HGF)POF2-400 |v Spin-based and quantum information |x 0 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-522 |2 G:(DE-HGF)POF3-500 |v Controlling Spin-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
914 | 1 | _ | |y 2015 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
980 | _ | _ | |a talk |
980 | _ | _ | |a VDB |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
980 | _ | _ | |a UNRESTRICTED |
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