Journal Article

PreJuSER-18865

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Etching titanium nitride gate stacked on high-k dielectric

Gerharz, J.FZJ* ; Padmaraju, K. ; Moers, J.FZJ* ; Grützmacher, D.FZJ*

2011
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2011.02.049

Abstract: In this work a high-kappa-metal-gate patterning-process using ICP-RIE is proposed. The dry-etching is low on plasma-induced damages and highly selective to the dielectric due to its low bias-voltage. A self aligned removal of the high-kappa-layer is also applied to complete the gate-stack patterning. This procedure may substitute replacement-gate-processes for high-kappa-metal-gate CMOS-transistors. (C) 2011 Elsevier B.V. All rights reserved.

Keyword(s): J ; Titanium nitride (auto) ; Reactive ion etching (auto) ; Gadolinium-scandate (auto) ; High-kappa-metal-gate (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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