Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

guest :: login JuSER
		Search		Submit		Personalize Your alerts Your baskets Your searches		Help

Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs - FZJ-2015-02296

Main document file(s):

Similar records

JuSER :: :: :: ::
Powered by v1.1.7 |
Maintained by

Impressum | Data Privacy Policy

This site is also available in the following languages:
Deutsch English