%0 Journal Article
%A Iffländer, T.
%A Rolf-Pissarczyk, S.
%A Winking, L.
%A Ulbrich, R. G.
%A Al-Zubi, A.
%A Blügel, S.
%A Wenderoth, M.
%T Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
%J Physical review letters
%V 114
%N 14
%@ 1079-7114
%C College Park, Md.
%I APS
%M FZJ-2015-02456
%P 146804
%D 2015
%X We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000352472400011
%R 10.1103/PhysRevLett.114.146804
%U https://juser.fz-juelich.de/record/189278