Journal Article

FZJ-2015-02456

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study

Iffländer, T. (Corresponding Author) ; Rolf-Pissarczyk, S. ; Winking, L. ; Ulbrich, R.  G. ; Al-Zubi, A.FZJ* ; Blügel, S.FZJ* ; Wenderoth, M.

2015
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/9209  doi:10.1103/PhysRevLett.114.146804

Abstract: We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IAS-1)
2. Quanten-Theorie der Materialien (PGI-1)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
2. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2015

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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