000189278 001__ 189278
000189278 005__ 20210129215333.0
000189278 0247_ $$2doi$$a10.1103/PhysRevLett.114.146804
000189278 0247_ $$2ISSN$$a0031-9007
000189278 0247_ $$2ISSN$$a1079-7114
000189278 0247_ $$2WOS$$aWOS:000352472400011
000189278 0247_ $$2Handle$$a2128/9209
000189278 0247_ $$2altmetric$$aaltmetric:3892917
000189278 037__ $$aFZJ-2015-02456
000189278 082__ $$a550
000189278 1001_ $$0P:(DE-HGF)0$$aIffländer, T.$$b0$$eCorresponding Author
000189278 245__ $$aLocal Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
000189278 260__ $$aCollege Park, Md.$$bAPS$$c2015
000189278 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1428933987_30912
000189278 3367_ $$2DataCite$$aOutput Types/Journal article
000189278 3367_ $$00$$2EndNote$$aJournal Article
000189278 3367_ $$2BibTeX$$aARTICLE
000189278 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000189278 3367_ $$2DRIVER$$aarticle
000189278 520__ $$aWe investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.
000189278 536__ $$0G:(DE-HGF)POF3-142$$a142 - Controlling Spin-Based Phenomena (POF3-142)$$cPOF3-142$$fPOF III$$x0
000189278 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x1
000189278 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000189278 7001_ $$0P:(DE-HGF)0$$aRolf-Pissarczyk, S.$$b1
000189278 7001_ $$0P:(DE-HGF)0$$aWinking, L.$$b2
000189278 7001_ $$0P:(DE-HGF)0$$aUlbrich, R. G.$$b3
000189278 7001_ $$0P:(DE-Juel1)130498$$aAl-Zubi, A.$$b4$$ufzj
000189278 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b5$$ufzj
000189278 7001_ $$0P:(DE-HGF)0$$aWenderoth, M.$$b6
000189278 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.114.146804$$gVol. 114, no. 14, p. 146804$$n14$$p146804$$tPhysical review letters$$v114$$x1079-7114$$y2015
000189278 8564_ $$uhttps://juser.fz-juelich.de/record/189278/files/PhysRevLett.114.146804.pdf$$yOpenAccess
000189278 8564_ $$uhttps://juser.fz-juelich.de/record/189278/files/PhysRevLett.114.146804.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000189278 909CO $$ooai:juser.fz-juelich.de:189278$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000189278 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130498$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000189278 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130548$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000189278 9130_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen für zukünftige Informationstechnologien$$vSpin-based and quantum information$$x0
000189278 9131_ $$0G:(DE-HGF)POF3-142$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000189278 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x1
000189278 9141_ $$y2015
000189278 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000189278 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000189278 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000189278 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000189278 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000189278 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000189278 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000189278 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000189278 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000189278 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5
000189278 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000189278 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Agreement
000189278 9201_ $$0I:(DE-Juel1)IAS-1-20090406$$kIAS-1$$lQuanten-Theorie der Materialien$$x0
000189278 9201_ $$0I:(DE-Juel1)PGI-1-20110106$$kPGI-1$$lQuanten-Theorie der Materialien$$x1
000189278 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x2
000189278 9801_ $$aFullTexts
000189278 980__ $$ajournal
000189278 980__ $$aVDB
000189278 980__ $$aUNRESTRICTED
000189278 980__ $$aI:(DE-Juel1)IAS-1-20090406
000189278 980__ $$aI:(DE-Juel1)PGI-1-20110106
000189278 980__ $$aI:(DE-82)080009_20140620
000189278 981__ $$aI:(DE-Juel1)PGI-1-20110106