TY  - JOUR
AU  - Iffländer, T.
AU  - Rolf-Pissarczyk, S.
AU  - Winking, L.
AU  - Ulbrich, R. G.
AU  - Al-Zubi, A.
AU  - Blügel, S.
AU  - Wenderoth, M.
TI  - Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
JO  - Physical review letters
VL  - 114
IS  - 14
SN  - 1079-7114
CY  - College Park, Md.
PB  - APS
M1  - FZJ-2015-02456
SP  - 146804
PY  - 2015
AB  - We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000352472400011
DO  - DOI:10.1103/PhysRevLett.114.146804
UR  - https://juser.fz-juelich.de/record/189278
ER  -