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@ARTICLE{Ifflnder:189278,
author = {Iffländer, T. and Rolf-Pissarczyk, S. and Winking, L. and
Ulbrich, R. G. and Al-Zubi, A. and Blügel, S. and
Wenderoth, M.},
title = {{L}ocal {D}ensity of {S}tates at {M}etal-{S}emiconductor
{I}nterfaces: {A}n {A}tomic {S}cale {S}tudy},
journal = {Physical review letters},
volume = {114},
number = {14},
issn = {1079-7114},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2015-02456},
pages = {146804},
year = {2015},
abstract = {We investigate low temperature grown, abrupt, epitaxial,
nonintermixed, defect-free n-type and p-type Fe/GaAs(110)
interfaces by cross-sectional scanning tunneling microscopy
and spectroscopy with atomic resolution. The probed local
density of states shows that a model of the ideal
metal-semiconductor interface requires a combination of
metal-induced gap states and bond polarization at the
interface which is nicely corroborated by density functional
calculations. A three-dimensional finite element model of
the space charge region yields a precise value for the
Schottky barrier height.},
cin = {IAS-1 / PGI-1 / JARA-FIT},
ddc = {550},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000352472400011},
doi = {10.1103/PhysRevLett.114.146804},
url = {https://juser.fz-juelich.de/record/189278},
}