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| Hauptseite > Publikationsdatenbank > Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study > print |
| Hauptseite > Publikationsdatenbank > Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study > print |
| 001 | 189278 | ||
| 005 | 20210129215333.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevLett.114.146804 |2 doi |
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| 100 | 1 | _ | |a Iffländer, T. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study |
| 260 | _ | _ | |a College Park, Md. |c 2015 |b APS |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1428933987_30912 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height. |
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| 773 | _ | _ | |a 10.1103/PhysRevLett.114.146804 |g Vol. 114, no. 14, p. 146804 |0 PERI:(DE-600)1472655-5 |n 14 |p 146804 |t Physical review letters |v 114 |y 2015 |x 1079-7114 |
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