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024 7 _ |a 10.1103/PhysRevLett.114.146804
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100 1 _ |a Iffländer, T.
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245 _ _ |a Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study
260 _ _ |a College Park, Md.
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520 _ _ |a We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height.
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700 1 _ |a Rolf-Pissarczyk, S.
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700 1 _ |a Winking, L.
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700 1 _ |a Ulbrich, R. G.
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700 1 _ |a Blügel, S.
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700 1 _ |a Wenderoth, M.
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773 _ _ |a 10.1103/PhysRevLett.114.146804
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