%0 Journal Article
%A Schuck, Martin
%A Rieß, Sally
%A Schreiber, Marcel
%A Mussler, Gregor
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)
%J Journal of crystal growth
%V 420
%@ 0022-0248
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2015-02661
%P 37 - 41
%D 2015
%X Epitaxial, hexagonal Ge–Sb–Te was grown on Si(111)Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge–Sb–Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of View the MathML source50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML sourceR3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000353825100007
%R 10.1016/j.jcrysgro.2015.03.034
%U https://juser.fz-juelich.de/record/189504