Journal Article

FZJ-2015-02661

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)

Schuck, M. (Corresponding Author)FZJ* ; Rieß, S.FZJ* ; Schreiber, M.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2015
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2015.03.034

Abstract: Epitaxial, hexagonal Ge–Sb–Te was grown on Si(111)Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge–Sb–Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of View the MathML source50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML sourceR3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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