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000189504 1001_ $$0P:(DE-Juel1)145470$$aSchuck, Martin$$b0$$eCorresponding Author$$ufzj
000189504 245__ $$aMetal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)
000189504 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2015
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000189504 520__ $$aEpitaxial, hexagonal Ge–Sb–Te was grown on Si(111)Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge–Sb–Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of View the MathML source50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML sourceR3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
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000189504 7001_ $$0P:(DE-Juel1)145686$$aRieß, Sally$$b1
000189504 7001_ $$0P:(DE-HGF)0$$aSchreiber, Marcel$$b2
000189504 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b3
000189504 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b4
000189504 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b5$$ufzj
000189504 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2015.03.034$$gVol. 420, p. 37 - 41$$p37 - 41$$tJournal of crystal growth$$v420$$x0022-0248$$y2015
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