TY  - JOUR
AU  - Schuck, Martin
AU  - Rieß, Sally
AU  - Schreiber, Marcel
AU  - Mussler, Gregor
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)
JO  - Journal of crystal growth
VL  - 420
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2015-02661
SP  - 37 - 41
PY  - 2015
AB  - Epitaxial, hexagonal Ge–Sb–Te was grown on Si(111)Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge–Sb–Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of View the MathML source50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML sourceR3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000353825100007
DO  - DOI:10.1016/j.jcrysgro.2015.03.034
UR  - https://juser.fz-juelich.de/record/189504
ER  -