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@ARTICLE{Schuck:189504,
author = {Schuck, Martin and Rieß, Sally and Schreiber, Marcel and
Mussler, Gregor and Grützmacher, Detlev and Hardtdegen,
Hilde},
title = {{M}etal organic vapor phase epitaxy of hexagonal
{G}e–{S}b–{T}e ({GST})},
journal = {Journal of crystal growth},
volume = {420},
issn = {0022-0248},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2015-02661},
pages = {37 - 41},
year = {2015},
abstract = {Epitaxial, hexagonal Ge–Sb–Te was grown on
Si(111)Si(111) substrates by Metal Organic Vapor Phase
Epitaxy (MOVPE) using the precursor digermane. The effect of
reactor pressure, growth temperature and in situ
pre-treatment on morphology and Ge–Sb–Te composition was
studied. The composition is sensitive to reactor pressure
and growth temperature. Compositional control is achieved at
a reactor pressure of View the MathML source50hPa. Substrate
pre-treatment affects film coalescence. The use of hydrogen
and a suitable precursor pre-treatment leads to enhanced
surface coverage. X-ray diffraction reveals a trigonal
structure with lattice parameters close to that reported for
Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML
sourceR3¯m phase. The composition was confirmed by
energy-dispersive X-ray spectroscopy.},
cin = {PGI-9},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000353825100007},
doi = {10.1016/j.jcrysgro.2015.03.034},
url = {https://juser.fz-juelich.de/record/189504},
}