001     189504
005     20210129215402.0
024 7 _ |a 10.1016/j.jcrysgro.2015.03.034
|2 doi
024 7 _ |a 0022-0248
|2 ISSN
024 7 _ |a 1873-5002
|2 ISSN
024 7 _ |a WOS:000353825100007
|2 WOS
037 _ _ |a FZJ-2015-02661
082 _ _ |a 540
100 1 _ |a Schuck, Martin
|0 P:(DE-Juel1)145470
|b 0
|e Corresponding Author
|u fzj
245 _ _ |a Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)
260 _ _ |a Amsterdam [u.a.]
|c 2015
|b Elsevier
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1429536722_28971
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
520 _ _ |a Epitaxial, hexagonal Ge–Sb–Te was grown on Si(111)Si(111) substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) using the precursor digermane. The effect of reactor pressure, growth temperature and in situ pre-treatment on morphology and Ge–Sb–Te composition was studied. The composition is sensitive to reactor pressure and growth temperature. Compositional control is achieved at a reactor pressure of View the MathML source50hPa. Substrate pre-treatment affects film coalescence. The use of hydrogen and a suitable precursor pre-treatment leads to enhanced surface coverage. X-ray diffraction reveals a trigonal structure with lattice parameters close to that reported for Ge1Sb2Te4Ge1Sb2Te4 crystallizing in the View the MathML sourceR3¯m phase. The composition was confirmed by energy-dispersive X-ray spectroscopy.
536 _ _ |a 523 - Controlling Configuration-Based Phenomena (POF3-523)
|0 G:(DE-HGF)POF3-523
|c POF3-523
|x 0
|f POF III
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Rieß, Sally
|0 P:(DE-Juel1)145686
|b 1
700 1 _ |a Schreiber, Marcel
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Mussler, Gregor
|0 P:(DE-Juel1)128617
|b 3
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 4
700 1 _ |a Hardtdegen, Hilde
|0 P:(DE-Juel1)125593
|b 5
|u fzj
773 _ _ |a 10.1016/j.jcrysgro.2015.03.034
|g Vol. 420, p. 37 - 41
|0 PERI:(DE-600)1466514-1
|p 37 - 41
|t Journal of crystal growth
|v 420
|y 2015
|x 0022-0248
856 4 _ |u http://www.sciencedirect.com/science/article/pii/S0022024815002572
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.gif?subformat=icon
|x icon
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.jpg?subformat=icon-1440
|x icon-1440
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.jpg?subformat=icon-180
|x icon-180
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.jpg?subformat=icon-640
|x icon-640
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/189504/files/1-s2.0-S0022024815002572-main.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:189504
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)145470
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)145686
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)162500
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)128617
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)125588
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)125593
913 0 _ |a DE-HGF
|b Schlüsseltechnologien
|l Grundlagen für zukünftige Informationstechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-523
|2 G:(DE-HGF)POF3-500
|v Controlling Configuration-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2015
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0310
|2 StatID
|b NCBI Molecular Biology Database
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
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