000189510 001__ 189510
000189510 005__ 20210129215403.0
000189510 0247_ $$2doi$$a10.1007/s11051-014-2805-4
000189510 0247_ $$2ISSN$$a1388-0764
000189510 0247_ $$2ISSN$$a1572-896X
000189510 0247_ $$2WOS$$aWOS:000346697000064
000189510 037__ $$aFZJ-2015-02664
000189510 082__ $$a570
000189510 1001_ $$0P:(DE-HGF)0$$aŠimek, Petr$$b0
000189510 245__ $$aSynthesis of InN nanoparticles by rapid thermal ammonolysis
000189510 260__ $$aDordrecht [u.a.]$$bSpringer Science + Business Media B.V$$c2014
000189510 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1429536990_28968
000189510 3367_ $$2DataCite$$aOutput Types/Journal article
000189510 3367_ $$00$$2EndNote$$aJournal Article
000189510 3367_ $$2BibTeX$$aARTICLE
000189510 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000189510 3367_ $$2DRIVER$$aarticle
000189510 520__ $$aAIII group nitrides have attracted a great deal of attention in the last decades due to their applications in modern microelectronic and optoelectronic devices. In this paper, simple and controllable methods for a synthesis of InN nanoparticles in the form of nanodisks and skeletal nanostructures are presented. Careful control of the experimental conditions is necessary, as the thermal stability of InN at elevated temperatures is low. The morphology of nanoparticles was investigated by scanning electron microscopy and transmission electron microscopy combined with selected area diffraction. Profile analysis of powder X-ray diffraction data shows that the apparent size of the crystals along [001] direction decreases from the size larger than 100 nm for the low temperature syntheses to about 65 nm for the high temperature ones. Structural properties were investigated using X-ray diffraction, Raman, and photoluminescence spectroscopy. Thermal stability was probed by differential scanning calorimetry coupled with thermogravimetry in Ar and air atmospheres. Chemical composition and purity of InN are strongly dependent on temperature and duration of the synthesis.
000189510 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000189510 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000189510 7001_ $$0P:(DE-HGF)0$$aSedmidubský, David$$b1
000189510 7001_ $$0P:(DE-HGF)0$$aKlímová, Kateřina$$b2
000189510 7001_ $$0P:(DE-HGF)0$$aHuber, Štěpán$$b3
000189510 7001_ $$0P:(DE-HGF)0$$aBrázda, Petr$$b4
000189510 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b5$$ufzj
000189510 7001_ $$0P:(DE-HGF)0$$aJankovský, Ondřej$$b6
000189510 7001_ $$0P:(DE-HGF)0$$aSofer, Zdeněk$$b7$$eCorresponding Author
000189510 773__ $$0PERI:(DE-600)2017013-0$$a10.1007/s11051-014-2805-4$$gVol. 16, no. 12, p. 2805$$n12$$p2805$$tJournal of nanoparticle research$$v16$$x1572-896X$$y2014
000189510 8564_ $$uhttp://link.springer.com/article/10.1007%2Fs11051-014-2805-4
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.pdf$$yRestricted
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.gif?subformat=icon$$xicon$$yRestricted
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.jpg?subformat=icon-180$$xicon-180$$yRestricted
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.jpg?subformat=icon-640$$xicon-640$$yRestricted
000189510 8564_ $$uhttps://juser.fz-juelich.de/record/189510/files/art_10.1007_s11051-014-2805-4.pdf?subformat=pdfa$$xpdfa$$yRestricted
000189510 909CO $$ooai:juser.fz-juelich.de:189510$$pVDB
000189510 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000189510 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000189510 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000189510 9141_ $$y2014
000189510 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000189510 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000189510 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000189510 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000189510 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000189510 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000189510 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000189510 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000189510 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF <  5
000189510 920__ $$lyes
000189510 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000189510 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000189510 980__ $$ajournal
000189510 980__ $$aVDB
000189510 980__ $$aI:(DE-Juel1)PGI-9-20110106
000189510 980__ $$aI:(DE-82)080009_20140620
000189510 980__ $$aUNRESTRICTED