% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{imek:189510, author = {Šimek, Petr and Sedmidubský, David and Klímová, Kateřina and Huber, Štěpán and Brázda, Petr and Mikulics, Martin and Jankovský, Ondřej and Sofer, Zdeněk}, title = {{S}ynthesis of {I}n{N} nanoparticles by rapid thermal ammonolysis}, journal = {Journal of nanoparticle research}, volume = {16}, number = {12}, issn = {1572-896X}, address = {Dordrecht [u.a.]}, publisher = {Springer Science + Business Media B.V}, reportid = {FZJ-2015-02664}, pages = {2805}, year = {2014}, abstract = {AIII group nitrides have attracted a great deal of attention in the last decades due to their applications in modern microelectronic and optoelectronic devices. In this paper, simple and controllable methods for a synthesis of InN nanoparticles in the form of nanodisks and skeletal nanostructures are presented. Careful control of the experimental conditions is necessary, as the thermal stability of InN at elevated temperatures is low. The morphology of nanoparticles was investigated by scanning electron microscopy and transmission electron microscopy combined with selected area diffraction. Profile analysis of powder X-ray diffraction data shows that the apparent size of the crystals along [001] direction decreases from the size larger than 100 nm for the low temperature syntheses to about 65 nm for the high temperature ones. Structural properties were investigated using X-ray diffraction, Raman, and photoluminescence spectroscopy. Thermal stability was probed by differential scanning calorimetry coupled with thermogravimetry in Ar and air atmospheres. Chemical composition and purity of InN are strongly dependent on temperature and duration of the synthesis.}, cin = {PGI-9 / JARA-FIT}, ddc = {570}, cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$}, pnm = {421 - Frontiers of charge based Electronics (POF2-421)}, pid = {G:(DE-HGF)POF2-421}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000346697000064}, doi = {10.1007/s11051-014-2805-4}, url = {https://juser.fz-juelich.de/record/189510}, }