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000189601 1001_ $$0P:(DE-HGF)0$$aMaryško, M.$$b0$$eCorresponding Author
000189601 245__ $$aFerromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films
000189601 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000189601 520__ $$aThe SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.
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000189601 7001_ $$0P:(DE-HGF)0$$aHejtmánek, J.$$b1
000189601 7001_ $$0P:(DE-HGF)0$$aLaguta, V.$$b2
000189601 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b3
000189601 7001_ $$0P:(DE-HGF)0$$aSedmidubský, D.$$b4
000189601 7001_ $$0P:(DE-HGF)0$$aŠimek, P.$$b5
000189601 7001_ $$0P:(DE-HGF)0$$aVeselý, M.$$b6
000189601 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b7$$ufzj
000189601 7001_ $$0P:(DE-Juel1)125570$$aBuchal, C.$$b8$$ufzj
000189601 7001_ $$0P:(DE-HGF)0$$aMacková, A.$$b9
000189601 7001_ $$0P:(DE-HGF)0$$aMalínský, P.$$b10
000189601 7001_ $$0P:(DE-HGF)0$$aWilhelm, R. A.$$b11
000189601 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4916761$$gVol. 117, no. 17, p. 17B907 -$$n17$$p17B907 $$tJournal of applied physics$$v117$$x1089-7550$$y2015
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