Journal Article

FZJ-2015-02738

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

Maryško, M. (Corresponding Author) ; Hejtmánek, J. ; Laguta, V. ; Sofer, Z. ; Sedmidubský, D. ; Šimek, P. ; Veselý, M. ; Mikulics, M.FZJ* ; Buchal, C.FZJ* ; Macková, A. ; Malínský, P. ; Wilhelm, R. A.

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17108  doi:10.1063/1.4916761

Abstract: The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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