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| 001 | 189601 | ||
| 005 | 20210129215419.0 | ||
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| 100 | 1 | _ | |a Maryško, M. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films |
| 260 | _ | _ | |a Melville, NY |c 2015 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field. |
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| 773 | _ | _ | |a 10.1063/1.4916761 |g Vol. 117, no. 17, p. 17B907 - |0 PERI:(DE-600)1476463-5 |n 17 |p 17B907 |t Journal of applied physics |v 117 |y 2015 |x 1089-7550 |
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