%0 Journal Article
%A Dauber, J.
%A Terrés, B.
%A Volk, Christian
%A Trellenkamp, S.
%A Stampfer, C.
%T Reducing disorder in graphene nanoribbons by chemical edge modification
%J Applied physics letters
%V 104
%N 8
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2015-02792
%P 083105
%D 2014
%X We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000332619100106
%R 10.1063/1.4866289
%U https://juser.fz-juelich.de/record/189762