Journal Article

FZJ-2015-02792

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reducing disorder in graphene nanoribbons by chemical edge modification

Dauber, J. (Corresponding Author)FZJ* ; Terrés, B.FZJ* ; Volk, C.FZJ* ; Trellenkamp, S.* ; Stampfer, C.FZJ*

2014
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/15750  doi:10.1063/1.4866289

Abstract: We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Bioelektronik (PGI-8)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
2. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2014

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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