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000189762 1001_ $$0P:(DE-Juel1)139063$$aDauber, J.$$b0$$eCorresponding Author
000189762 245__ $$aReducing disorder in graphene nanoribbons by chemical edge modification
000189762 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2014
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000189762 520__ $$aWe present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
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000189762 7001_ $$0P:(DE-HGF)0$$aTerrés, B.$$b1
000189762 7001_ $$0P:(DE-HGF)0$$aVolk, Christian$$b2
000189762 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b3
000189762 7001_ $$0P:(DE-HGF)0$$aStampfer, C.$$b4
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