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001     189762
005     20210129215432.0
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100 1 _ |a Dauber, J.
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245 _ _ |a Reducing disorder in graphene nanoribbons by chemical edge modification
260 _ _ |a Melville, NY
|c 2014
|b American Inst. of Physics
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520 _ _ |a We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
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700 1 _ |a Terrés, B.
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700 1 _ |a Volk, Christian
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700 1 _ |a Trellenkamp, S.
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700 1 _ |a Stampfer, C.
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773 _ _ |a 10.1063/1.4866289
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