%0 Journal Article
%A Müller, M. R.
%A Gumprich, A.
%A Schütte, F.
%A Kallis, K.
%A Künzelmann, U.
%A Engels, S.
%A Stampfer, C.
%A Wilck, N.
%A Knoch, J.
%T Buried triple-gate structures for advanced field-effect transistor devices
%J Microelectronic engineering
%V 119
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M FZJ-2015-02794
%P 95 - 99
%D 2014
%X One key element in the investigation of novel channel materials and device principles is the realization of an appropriate source–drain doping profile. The paper at hand describes the manufacturing of a buried triple-gate (BTG) structure, where three separately addressable gates are implemented to control the charge carrier density within source, drain, and the channel of a field-effect transistor. The BTG structure is optimized for the investigation of graphene, and a 30 nm graphene nanoribbon is fabricated on top of the structure. Electrical measurements at 25 K indicate the successful realization of p-n junctions and demonstrate band-to-band tunneling at the source–channel and channel–drain interfaces.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000343364400021
%R 10.1016/j.mee.2014.02.001
%U https://juser.fz-juelich.de/record/189764