Journal Article

FZJ-2015-02794

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Buried triple-gate structures for advanced field-effect transistor devices

Müller, M. R. (Corresponding Author) ; Gumprich, A. ; Schütte, F. ; Kallis, K. ; Künzelmann, U. ; Engels, S.FZJ* ; Stampfer, C.FZJ* ; Wilck, N. ; Knoch, J. (Corresponding Author)

2014
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2014.02.001

Abstract: One key element in the investigation of novel channel materials and device principles is the realization of an appropriate source–drain doping profile. The paper at hand describes the manufacturing of a buried triple-gate (BTG) structure, where three separately addressable gates are implemented to control the charge carrier density within source, drain, and the channel of a field-effect transistor. The BTG structure is optimized for the investigation of graphene, and a 30 nm graphene nanoribbon is fabricated on top of the structure. Electrical measurements at 25 K indicate the successful realization of p-n junctions and demonstrate band-to-band tunneling at the source–channel and channel–drain interfaces.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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