TY  - JOUR
AU  - Müller, M. R.
AU  - Gumprich, A.
AU  - Schütte, F.
AU  - Kallis, K.
AU  - Künzelmann, U.
AU  - Engels, S.
AU  - Stampfer, C.
AU  - Wilck, N.
AU  - Knoch, J.
TI  - Buried triple-gate structures for advanced field-effect transistor devices
JO  - Microelectronic engineering
VL  - 119
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - FZJ-2015-02794
SP  - 95 - 99
PY  - 2014
AB  - One key element in the investigation of novel channel materials and device principles is the realization of an appropriate source–drain doping profile. The paper at hand describes the manufacturing of a buried triple-gate (BTG) structure, where three separately addressable gates are implemented to control the charge carrier density within source, drain, and the channel of a field-effect transistor. The BTG structure is optimized for the investigation of graphene, and a 30 nm graphene nanoribbon is fabricated on top of the structure. Electrical measurements at 25 K indicate the successful realization of p-n junctions and demonstrate band-to-band tunneling at the source–channel and channel–drain interfaces.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000343364400021
DO  - DOI:10.1016/j.mee.2014.02.001
UR  - https://juser.fz-juelich.de/record/189764
ER  -