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| 001 | 189764 | ||
| 005 | 20210129215432.0 | ||
| 024 | 7 | _ | |a 10.1016/j.mee.2014.02.001 |2 doi |
| 024 | 7 | _ | |a 0167-9317 |2 ISSN |
| 024 | 7 | _ | |a 1873-5568 |2 ISSN |
| 024 | 7 | _ | |a WOS:000343364400021 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-02794 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Müller, M. R. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Buried triple-gate structures for advanced field-effect transistor devices |
| 260 | _ | _ | |a [S.l.] @ |c 2014 |b Elsevier |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1430231729_26979 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a One key element in the investigation of novel channel materials and device principles is the realization of an appropriate source–drain doping profile. The paper at hand describes the manufacturing of a buried triple-gate (BTG) structure, where three separately addressable gates are implemented to control the charge carrier density within source, drain, and the channel of a field-effect transistor. The BTG structure is optimized for the investigation of graphene, and a 30 nm graphene nanoribbon is fabricated on top of the structure. Electrical measurements at 25 K indicate the successful realization of p-n junctions and demonstrate band-to-band tunneling at the source–channel and channel–drain interfaces. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
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| 700 | 1 | _ | |a Gumprich, A. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Schütte, F. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Kallis, K. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Künzelmann, U. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Engels, S. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Stampfer, C. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Wilck, N. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Knoch, J. |0 P:(DE-HGF)0 |b 8 |e Corresponding Author |
| 773 | _ | _ | |a 10.1016/j.mee.2014.02.001 |g Vol. 119, p. 95 - 99 |0 PERI:(DE-600)1497065-x |p 95 - 99 |t Microelectronic engineering |v 119 |y 2014 |x 0167-9317 |
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| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
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