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@ARTICLE{Wirths:19991,
author = {Wirths, S. and Mikulics, M. and Heintzmann, P. and Winden,
A. and Weis, K. and Volk, Ch. and Sladek, K. and Demarina,
N. and Hardtdegen, H. and Grützmacher, D. and Schäpers,
Th.},
title = {{P}reparation of {O}hmic contacts to
{G}a{A}s/{A}l{G}a{A}s-core/shell-nanowires},
journal = {Applied physics letters},
volume = {100},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-19991},
pages = {042103},
year = {2012},
note = {Record converted from VDB: 12.11.2012},
abstract = {Ohmic contacts to GaAs/AlGaAs core/shell nanowires are
prepared by using a Ni/AuGe/Ni/Au layer system. In contrast
to Ohmic contacts to planar GaAs/AlGaAs layer systems here,
relatively low alloying temperatures are used in cylindrical
geometry. Lowest resistances are found for annealing
temperatures of 320 degrees C and 340 degrees C. For
annealing temperatures exceeding 360 degrees C, the
nanowires degraded completely. Nanowires annealed under
optimized conditions preserved their Ohmic characteristics
even down to temperatures of 4K. (C) 2012 American Institute
of Physics. [doi:10.1063/1.3678639]},
keywords = {J (WoSType)},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000300064500034},
doi = {10.1063/1.3678639},
url = {https://juser.fz-juelich.de/record/19991},
}