Journal Article

PreJuSER-19991

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Wirths, S.FZJ* ; Mikulics, M.FZJ* ; Heintzmann, P.FZJ* ; Winden, A.FZJ* ; Weis, K.FZJ* ; Volk, C.FZJ* ; Sladek, K.FZJ* ; Demarina, N.FZJ* ; Hardtdegen, H.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2012
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7413  doi:10.1063/1.3678639

Abstract: Ohmic contacts to GaAs/AlGaAs core/shell nanowires are prepared by using a Ni/AuGe/Ni/Au layer system. In contrast to Ohmic contacts to planar GaAs/AlGaAs layer systems here, relatively low alloying temperatures are used in cylindrical geometry. Lowest resistances are found for annealing temperatures of 320 degrees C and 340 degrees C. For annealing temperatures exceeding 360 degrees C, the nanowires degraded completely. Nanowires annealed under optimized conditions preserved their Ohmic characteristics even down to temperatures of 4K. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678639]

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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