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| Hauptseite > Publikationsdatenbank > Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires > print |
| Hauptseite > Publikationsdatenbank > Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires > print |
| 001 | 19991 | ||
| 005 | 20200604162541.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.3678639 |
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| 100 | 1 | _ | |0 P:(DE-Juel1)VDB95114 |a Wirths, S. |b 0 |u FZJ |
| 245 | _ | _ | |a Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2012 |
| 300 | _ | _ | |a 042103 |
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| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 100 |x 0003-6951 |y 4 |
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| 520 | _ | _ | |a Ohmic contacts to GaAs/AlGaAs core/shell nanowires are prepared by using a Ni/AuGe/Ni/Au layer system. In contrast to Ohmic contacts to planar GaAs/AlGaAs layer systems here, relatively low alloying temperatures are used in cylindrical geometry. Lowest resistances are found for annealing temperatures of 320 degrees C and 340 degrees C. For annealing temperatures exceeding 360 degrees C, the nanowires degraded completely. Nanowires annealed under optimized conditions preserved their Ohmic characteristics even down to temperatures of 4K. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678639] |
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| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3678639 |g Vol. 100, p. 042103 |p 042103 |q 100<042103 |t Applied physics letters |v 100 |x 0003-6951 |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3678639 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/19991/files/FZJ-19991.pdf |y Published under German "Allianz" Licensing conditions on 2012-01-24. Available in OpenAccess from 2012-01-24 |z Published final document. |
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