%0 Journal Article
%A Kampmeier, Jörn
%A Borisova, Svetlana
%A Plucinsci, L.
%A Luysberg, Martina
%A Mussler, Gregor
%A Grützmacher, Detlev
%T Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi $_{2}$ Te $_{3}$ Topological Insulator Thin Films
%J Crystal growth & design
%V 15
%N 1
%@ 1528-7505
%C Washington, DC
%I ACS Publ.
%M FZJ-2015-03332
%P 390 - 394
%D 2015
%X The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates—measured by X-ray diffraction pole figure scans—is presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000347667500048
%R 10.1021/cg501471z
%U https://juser.fz-juelich.de/record/201022