Journal Article

FZJ-2015-03332

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi $_{2}$ Te $_{3}$ Topological Insulator Thin Films

Kampmeier, J. (Corresponding Author)FZJ* ; Borisova, S.FZJ* ; Plucinsci, L. ; Luysberg, M.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ*

2015
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/cg501471z

Abstract: The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates—measured by X-ray diffraction pole figure scans—is presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Halbleiter-Nanoelektronik (PGI-9)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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