TY  - JOUR
AU  - Kampmeier, Jörn
AU  - Borisova, Svetlana
AU  - Plucinsci, L.
AU  - Luysberg, Martina
AU  - Mussler, Gregor
AU  - Grützmacher, Detlev
TI  - Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi $_{2}$ Te $_{3}$ Topological Insulator Thin Films
JO  - Crystal growth & design
VL  - 15
IS  - 1
SN  - 1528-7505
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2015-03332
SP  - 390 - 394
PY  - 2015
AB  - The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substrates—measured by X-ray diffraction pole figure scans—is presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000347667500048
DO  - DOI:10.1021/cg501471z
UR  - https://juser.fz-juelich.de/record/201022
ER  -