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@ARTICLE{Kampmeier:201022,
author = {Kampmeier, Jörn and Borisova, Svetlana and Plucinsci, L.
and Luysberg, Martina and Mussler, Gregor and Grützmacher,
Detlev},
title = {{S}uppressing {T}win {D}omains in {M}olecular {B}eam
{E}pitaxy {G}rown {B}i $_{2}$ {T}e $_{3}$ {T}opological
{I}nsulator {T}hin {F}ilms},
journal = {Crystal growth $\&$ design},
volume = {15},
number = {1},
issn = {1528-7505},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2015-03332},
pages = {390 - 394},
year = {2015},
abstract = {The structural perfection of the topological insulator (TI)
Bi2Te3 is a key issue for its employment in future device
applications. State of the art TIs, featuring exotic
electronic properties, predominantly suffer from structural
defects such as twin domains. A suppression of such domains
in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111)
substrates—measured by X-ray diffraction pole figure
scans—is presented in this paper. A numerical analysis of
van der Waals potentials was performed, revealing the
nucleation collinear with the Si(311) reflections of the
Si(111) substrate to be energetically preferred.},
cin = {PGI-5 / PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)PGI-9-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000347667500048},
doi = {10.1021/cg501471z},
url = {https://juser.fz-juelich.de/record/201022},
}