%0 Journal Article
%A Telychko, Mykola
%A Mutombo, Pingo
%A Ondráček, Martin
%A Hapala, Prokop
%A Posseik, Francois
%A Kolorenč, Jindřich
%A Vondráček, Martin
%A Jelínek, Pavel
%A Švec, Martin
%T Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
%J ACS nano
%V 8
%N 7
%@ 1936-086X
%C Washington, DC
%I Soc.
%M FZJ-2015-03349
%P 7318 - 7324
%D 2014
%X We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000339463100089
%R 10.1021/nn502438k
%U https://juser.fz-juelich.de/record/201039