Journal Article

FZJ-2015-03349

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization

Telychko, M. ; Mutombo, P. ; Ondráček, M. ; Hapala, P. ; Posseik, F.FZJ* ; Kolorenč, J. ; Vondráček, M. ; Jelínek, P. ; Švec, M. (Corresponding Author)

2014
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nn502438k

Abstract: We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.

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Contributing Institute(s):

1. Quantum Nanoscience (PGI-3)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 422 - Spin-based and quantum information (POF2-422) (POF2-422)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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