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000201039 1001_ $$0P:(DE-HGF)0$$aTelychko, Mykola$$b0
000201039 245__ $$aAchieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
000201039 260__ $$aWashington, DC$$bSoc.$$c2014
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000201039 520__ $$aWe report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.
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000201039 7001_ $$0P:(DE-HGF)0$$aMutombo, Pingo$$b1
000201039 7001_ $$0P:(DE-HGF)0$$aOndráček, Martin$$b2
000201039 7001_ $$0P:(DE-HGF)0$$aHapala, Prokop$$b3
000201039 7001_ $$0P:(DE-Juel1)167128$$aPosseik, Francois$$b4$$ufzj
000201039 7001_ $$0P:(DE-HGF)0$$aKolorenč, Jindřich$$b5
000201039 7001_ $$0P:(DE-HGF)0$$aVondráček, Martin$$b6
000201039 7001_ $$0P:(DE-HGF)0$$aJelínek, Pavel$$b7
000201039 7001_ $$0P:(DE-HGF)0$$aŠvec, Martin$$b8$$eCorresponding Author
000201039 773__ $$0PERI:(DE-600)2383064-5$$a10.1021/nn502438k$$gVol. 8, no. 7, p. 7318 - 7324$$n7$$p7318 - 7324$$tACS nano$$v8$$x1936-086X$$y2014
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