TY  - JOUR
AU  - Telychko, Mykola
AU  - Mutombo, Pingo
AU  - Ondráček, Martin
AU  - Hapala, Prokop
AU  - Posseik, Francois
AU  - Kolorenč, Jindřich
AU  - Vondráček, Martin
AU  - Jelínek, Pavel
AU  - Švec, Martin
TI  - Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
JO  - ACS nano
VL  - 8
IS  - 7
SN  - 1936-086X
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2015-03349
SP  - 7318 - 7324
PY  - 2014
AB  - We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000339463100089
DO  - DOI:10.1021/nn502438k
UR  - https://juser.fz-juelich.de/record/201039
ER  -