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@ARTICLE{Telychko:201039,
author = {Telychko, Mykola and Mutombo, Pingo and Ondráček, Martin
and Hapala, Prokop and Posseik, Francois and Kolorenč,
Jindřich and Vondráček, Martin and Jelínek, Pavel and
Švec, Martin},
title = {{A}chieving {H}igh-{Q}uality {S}ingle-{A}tom {N}itrogen
{D}oping of {G}raphene/{S}i{C}(0001) by {I}on {I}mplantation
and {S}ubsequent {T}hermal {S}tabilization},
journal = {ACS nano},
volume = {8},
number = {7},
issn = {1936-086X},
address = {Washington, DC},
publisher = {Soc.},
reportid = {FZJ-2015-03349},
pages = {7318 - 7324},
year = {2014},
abstract = {We report a straightforward method to produce high-quality
nitrogen-doped graphene on SiC(0001) using direct nitrogen
ion implantation and subsequent stabilization at
temperatures above 1300 K. We demonstrate that double
defects, which comprise two nitrogen defects in a
second-nearest-neighbor (meta) configuration, can be formed
in a controlled way by adjusting the duration of
bombardment. Two types of atomic contrast of single N
defects are identified in scanning tunneling microscopy. We
attribute the origin of these two contrasts to different tip
structures by means of STM simulations. The characteristic
dip observed over N defects is explained in terms of the
destructive quantum interference.},
cin = {PGI-3 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-3-20110106 / $I:(DE-82)080009_20140620$},
pnm = {422 - Spin-based and quantum information (POF2-422)},
pid = {G:(DE-HGF)POF2-422},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000339463100089},
doi = {10.1021/nn502438k},
url = {https://juser.fz-juelich.de/record/201039},
}