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| Hauptseite > Publikationsdatenbank > Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization > print |
| Hauptseite > Publikationsdatenbank > Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization > print |
| 001 | 201039 | ||
| 005 | 20221213071229.0 | ||
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| 100 | 1 | _ | |a Telychko, Mykola |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization |
| 260 | _ | _ | |a Washington, DC |c 2014 |b Soc. |
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| 520 | _ | _ | |a We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference. |
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| 700 | 1 | _ | |a Švec, Martin |0 P:(DE-HGF)0 |b 8 |e Corresponding Author |
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