Journal Article

FZJ-2015-03706

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic Phase Coherence in InAs Nanowires

Blömers, C. ; Lepsa, M. I.FZJ* ; Luysberg, M.FZJ* ; Grützmacher, D.FZJ* ; Lüth, H.FZJ* ; Schäpers, T. (Corresponding Author)FZJ*

2011
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl201102a

Abstract: Magnetotransport measurements at low temperatures have been performed on InAs nanowires grown by In-assisted molecular beam epitaxy. Information on the electron phase coherence is obtained from universal conductance fluctuations measured in a perpendicular magnetic field. By analysis of the universal conductance fluctuations pattern of a series of nanowires of different length, the phase-coherence length could be determined quantitatively. Furthermore, indications of a pronounced flux cancelation effect were found, which is attributed to the topology of the nanowire. Additionally, we present measurements in a parallel configuration between wire and magnetic field. In contrast to previous results on InN and InAs nanowires, we do not find periodic oscillations of the magnetoconductance in this configuration. An explanation of this behavior is suggested in terms of the high density of stacking faults present in our InAs wires.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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