%0 Journal Article
%A Bangert, U.
%A Pierce, W.
%A Kepaptsoglou, D. M.
%A Ramasse, Q.
%A Zan, R.
%A Gass, M. H.
%A Van den Berg, J. A.
%A Boothroyd, C. B.
%A Amani, J.
%A Hofsäss, H.
%T Ion Implantation of Graphene—Toward IC Compatible Technologies
%J Nano letters
%V 13
%N 10
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M FZJ-2015-03840
%P 4902 - 4907
%D 2013
%X Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000326356300050
%$ pmid:24059439
%R 10.1021/nl402812y
%U https://juser.fz-juelich.de/record/201546