Journal Article

FZJ-2015-03840

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ion Implantation of Graphene—Toward IC Compatible Technologies

Bangert, U. (Corresponding Author) ; Pierce, W. ; Kepaptsoglou, D. M. ; Ramasse, Q. ; Zan, R. ; Gass, M. H. ; Van den Berg, J. A. ; Boothroyd, C. B.FZJ* ; Amani, J. ; Hofsäss, H.

2013
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl402812y

Abstract: Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 424 - Exploratory materials and phenomena (POF2-424) (POF2-424)

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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