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000201546 1001_ $$0P:(DE-HGF)0$$aBangert, U.$$b0$$eCorresponding Author
000201546 245__ $$aIon Implantation of Graphene—Toward IC Compatible Technologies
000201546 260__ $$aWashington, DC$$bACS Publ.$$c2013
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000201546 520__ $$aDoping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
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000201546 7001_ $$0P:(DE-HGF)0$$aRamasse, Q.$$b3
000201546 7001_ $$0P:(DE-HGF)0$$aZan, R.$$b4
000201546 7001_ $$0P:(DE-HGF)0$$aGass, M. H.$$b5
000201546 7001_ $$0P:(DE-HGF)0$$aVan den Berg, J. A.$$b6
000201546 7001_ $$0P:(DE-Juel1)144965$$aBoothroyd, C. B.$$b7$$ufzj
000201546 7001_ $$0P:(DE-HGF)0$$aAmani, J.$$b8
000201546 7001_ $$0P:(DE-HGF)0$$aHofsäss, H.$$b9
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