TY  - JOUR
AU  - Bangert, U.
AU  - Pierce, W.
AU  - Kepaptsoglou, D. M.
AU  - Ramasse, Q.
AU  - Zan, R.
AU  - Gass, M. H.
AU  - Van den Berg, J. A.
AU  - Boothroyd, C. B.
AU  - Amani, J.
AU  - Hofsäss, H.
TI  - Ion Implantation of Graphene—Toward IC Compatible Technologies
JO  - Nano letters
VL  - 13
IS  - 10
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2015-03840
SP  - 4902 - 4907
PY  - 2013
AB  - Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000326356300050
C6  - pmid:24059439
DO  - DOI:10.1021/nl402812y
UR  - https://juser.fz-juelich.de/record/201546
ER  -